The document introduces a series of radiation-hardened MOSFET products developed by Intersil Corporation for commercial and military space applications. These products have enhanced immunity to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR), and can withstand a total dose hardness of 100K RADS, making them ideal for harsh space environments. The dose rate and neutron tolerance required for military applications are also met. The SEGR resistant radiation-hardened MOSFET portfolio from Intersil includes N-Channel and P-Channel devices.
The FSF150D and FSF150R are N‑channel power MOSFETs designed for harsh radiation environments. They provide 25 A continuous drain current, 100 V drain‑to‑source voltage, and a low on‑state resistance of 0.070 Ω, while maintaining immunity to single‑event gate rupture (SEGR) and other single‑event effects.
These devices are supplied in a TO‑254AA hermetic metal package and are qualified to 100 kRad (Si) total dose, with a LET immunity of 36 MeV·mg⁻¹·cm⁻¹. They are intended for space‑qualified switching regulators, motor drives, relay drivers, and high‑power bipolar switching transistor drivers.
| Package Type | TO‑254AA hermetic metal |
|---|---|
| Radiation Hardness | 100 kRad (Si) total dose |
| SEGR Immunity (LET) | 36 MeV·mg⁻¹·cm⁻¹ |
It is qualified to withstand up to 100 kRad (Si) total dose.
Both devices are supplied in a TO‑254AA hermetic metal package.