This document describes the features and characteristics of 1N5221B and 1N5267B diodes, including very sharp reverse characteristic, very high stability, low reverse current level, etc.
The 1N5221B‑1N5267B series are silicon Z‑diodes from Vishay Telefunken offering very sharp reverse characteristics, high stability, and low reverse current. They are intended for voltage‑stabilization applications and other circuits requiring precise Z‑voltage control.
Key specifications include a maximum power dissipation of 500 mW, a typical forward voltage of 1.1 V at 200 mA, and a junction temperature rating up to 200 °C. The devices are supplied in standard DO‑35 glass packages with defined dimensions and storage temperature limits.
| Power dissipation | 500 mW |
|---|---|
| Forward voltage (200 mA) | 1.1 V |
| Junction temperature (max) | 200 °C |
The diode can dissipate up to 500 mW.
At 200 mA forward current, the typical forward voltage is 1.1 V.
The diode is rated for a maximum junction temperature of 200 °C.