This document describes the features and characteristics of the STS6PF30L P-CHANNEL 30V - 0.027 Ω - 6A SO-8 STripFET™ POWER MOSFET product, released on May 1, 2003. It includes low on-resistance, high packing density, rugged avalanche characteristics, and ease of automated surface mount assembly.
The STS6PF30L is a P‑channel 30 V Power MOSFET designed with STMicroelectronics' Single Feature Size™ process, offering low on‑resistance, rugged avalanche capability, and easy surface‑mount assembly. It is targeted for mobile phone applications, DC‑DC converters, and battery‑management in portable equipment.
The document lists detailed electrical characteristics (on‑resistance, gate charge, switching times), thermal data (junction‑ambient resistance, storage temperature range), mechanical dimensions, and normalized curves for temperature dependence. Test circuit diagrams and safety notices are also included.
| Maximum Drain Current (continuous) | 3.8 A at 25 °C |
|---|---|
| Pulsed Drain Current | 6 A |
| Junction‑Ambient Thermal Resistance | Max 50 °C/W |
| Storage Temperature Range | -55 °C to 150 °C |
| Output Capacitance (Coss) | 345 pF |
The device can handle a continuous drain current of 3.8 A at 25 °C and a pulsed current of up to 6 A.
Maximum junction‑ambient thermal resistance is 50 °C/W, the lead temperature for soldering is 150 °C, and it can be stored from –55 °C to 150 °C.