This document describes the general features and applications of the 2N7000 and 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET, released on April 1, 2005.
The document provides detailed specifications for the STMicroelectronics 2N7000 and 2N7002 N‑channel MOSFETs, including general features, absolute maximum ratings, and electrical characteristics. It covers both the TO‑92 (2N7000) and SOT23‑3L (2N7002) package variants.
Key data such as drain‑source voltage, continuous drain current, on‑resistance, gate threshold voltage, and mechanical dimensions are presented in tables, along with thermal impedance curves and safe operating area diagrams. Revision history and legal notices conclude the sheet.
| Drain‑source Voltage (Vds) | 60 V |
|---|---|
| Typical On‑Resistance (Rds(on)) at Vgs=10 V | 1.8 Ω (2N7000) / 0.35 Ω (2N7002) |
| Package Type | TO‑92 (2N7000) / SOT23‑3L (2N7002) |
Both devices are rated for a maximum drain‑source voltage of 60 V.
The typical on‑resistance of the 2N7002 is about 0.35 Ω at Vgs = 10 V.
The devices can operate from –55 °C up to 150 °C junction temperature.