This document describes the features and characteristics of the 16 Kbit Serial Electrically Erasable PROMs produced by Microchip Technology Inc., including low-power CMOS technology, 2048 x 8-bit organization, 16-byte page, self-timed erase and write cycles, block write protection, and built-in write protection.
This document describes the 25AA160, 25LC160 and 25C160 16‑Kbit SPI serial EEPROM family. It includes electrical characteristics, pin descriptions, timing diagrams, and functional operation such as read and write sequences. The devices are offered in 8‑pin PDIP and SOIC packages and support industrial and automotive temperature ranges.
Key features include low‑power GMOS technology, block write protection, high endurance (1 M cycles), long data retention (>200 years), and ESD protection (>4000 V). The datasheet also provides detailed timing diagrams for HOLD, serial input, and serial output operations.
| Memory Capacity | 16 Kbit |
|---|---|
| Organization | 2048 × 8‑bit |
| Page Size | 16 bytes |
| Write Current | 3 mA max |
| Read Current | 500 pA typical |
| Standby Current | 500 nA typical |
| Supply Voltage (25AA160) | 1.8 V – 5.5 V |
| Supply Voltage (25LC160) | 2.5 V – 5.5 V |
| Supply Voltage (25C160) | 4.5 V – 5.5 V |
| Temperature Range (Industrial) | -40 °C to +85 °C |
| Write Cycle Time | 5 ms max |
| Endurance | 1 M cycles |
| Data Retention | >200 years |
| ESD Protection | >4000 V |
| Package Types | 8‑pin PDIP, 8‑pin SOIC |
The 25C160 operates from 4.5 V up to 5.5 V.
Up to 16 bytes can be written in a single page write, provided all bytes are within the same page.
A write cycle completes in a maximum of 5 ms.
The devices are rated for 1 million write/erase cycles.