The ATF-10236 is a high performance gallium arsenide Schottky-barrier- gate field effect transistor housed in a cost effective microstrip package.
The ATF-10236 is a high‑performance gallium arsenide Schottky‑barrier gate field‑effect transistor designed for low‑noise applications in the 0.5‑12 GHz frequency range. It features a 0.3 µm gate length, air‑bridge interconnects, and a rugged gold‑based metallization.
Key specifications include a typical noise figure of 0.8 dB at 4 GHz, 13 dB gain at the same frequency, and 20 dBm output power. The device is supplied in a 36‑micro‑X ceramic microstrip package with tape‑and‑reel options, and it meets absolute maximum ratings such as 45 V drain‑source voltage and 31 mW power dissipation.
| Typical Noise Figure at 4 GHz | 0.8 dB |
|---|---|
| Associated Gain at 4 GHz | 13.0 dB |
| Gate Length | 0.3 µm |
| Maximum Drain‑Source Voltage (Vds) | 45 V |
| Maximum Gate‑Source Voltage (Vgs) | +4 V |
| Power Dissipation | 31 mW |
| Package Type | 36 micro‑X |
The typical noise figure is 0.8 dB at 4 GHz.
The device can tolerate up to 45 V drain‑source voltage.
A gate‑source voltage of 2 V with a gate current of 25 mA is used for the listed noise figures.
It is supplied in a 36 micro‑X ceramic microstrip package, available in tape‑and‑reel form.