This document describes the features and characteristics of the A29L800A Series 1M x 8 Bit / 512K x 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory.
The A29L800A is an 8‑Mbit flash memory organized as 1 M × 8 bit or 512 K × 16 bit, operating from a single 3.0 V supply. It supports full‑chip erase, sector protection, and includes embedded program/erase algorithms. The device is compatible with JEDEC single‑power‑supply flash standards and offers both byte and word configurations.
Key features include a wide voltage range (2.7 V–3.6 V), fast access times (70 ns/90 ns), low standby current (200 nA), 100 k program/erase cycles per sector, and 20‑year data retention at 125 °C. Available in 44‑pin SOP, 48‑pin TSOP and 48‑ball TFBGA packages.
| Memory organization | 1M × 8 bit / 512K × 16 bit (8 Mbit) |
|---|---|
| Operating voltage range | 2.7 V to 3.6 V |
| Access times | 70 ns / 90 ns (max) |
| Typical active read current | 9 mA |
| Typical program/erase current | 20 mA |
| Standby current | 200 nA |
| Automatic sleep mode current | 200 nA |
| Operating temperature range | -40 °C to +85 °C (U series); -25 °C to +85 °C (I series) |
| Data retention | 20 years at 125 °C |
| Program/erase cycles per sector | Typical 100,000 cycles |
| Package options | 44‑pin SOP, 48‑pin TSOP, 48‑ball TFBGA |
The device operates from 2.7 V to 3.6 V.
Typical endurance is 100 000 program/erase cycles per sector.
It is offered in 44‑pin SOP, 48‑pin TSOP and 48‑ball TFBGA packages.
Typical standby current is 200 nA.