This document provides the absolute maximum ratings and thermal characteristics of the MMBD1200 series small signal diodes. It includes the markings, maximum repetitive reverse voltage, average rectified forward current, non-repetitive peak forward surge current, storage temperature range, and operating junction temperature for each model. Additionally, the document lists the electrical characteristics of each model, such as breakdown voltage, forward voltage, reverse current, and total capacitance.
The MMBD1200 series comprises the MMBD1201, MMBD1203, MMBD1204, and MMBD1205 small‑signal diodes offered in SOT‑23, DO‑35, and other packages. The datasheet lists absolute maximum ratings, electrical parameters, and typical characteristic curves to aid designers in selecting the appropriate device.
Key specifications include a 100 V reverse voltage rating, 200 mA average forward current, 350 mW power dissipation, and a storage temperature range of –55 °C to +150 °C. Thermal resistance, junction‑to‑ambient is 357 °C/W, and reverse recovery time is typically 4 ns. The document also contains product status definitions and trademark information.
| Maximum Repetitive Reverse Voltage | 100 V |
|---|---|
| Average Rectified Forward Current | 200 mA |
| Peak Forward Surge Current (1 µs) | 2.0 A |
| Storage Temperature Range | -55 to +150 °C |
| Power Dissipation | 350 mW |
| Thermal Resistance, Junction‑to‑Ambient | 357 °C/W |
| Reverse Current (V_R=20 V) | 25 nA |
The maximum repetitive reverse voltage is 100 V.
They can be stored from –55 °C up to +150 °C.
The datasheet specifies a power dissipation rating of 350 mW.