The 1N4454 is a high-conductance ultra-fast diode from Fairchild Semiconductor Corporation. Its working temperature range is -65 ° C to +200 ° C, the peak forward current is 4.0 A, the maximum reverse current is 100 nA, and the maximum power consumption is 500 mW.
The 1N4454 is a high‑conductance, ultra‑fast recovery diode intended for high‑speed switching applications. The datasheet lists its absolute maximum ratings, thermal limits, and detailed electrical characteristics.
Key specifications include a 50 V reverse voltage, 400 mA DC forward current, and a total dissipation of 500 mW. Thermal resistance is 300 °C/W and the device can be stored from –65 °C to +200 °C. Forward voltage ranges from 505 mV to 1.0 V depending on current, and reverse recovery time is 4 ns at 10 mA.
| Working Inverse Voltage (Ww) | 50 V |
|---|---|
| Average Rectified Current (Io) | 200 mA |
| DC Forward Current (Ir) | 400 mA |
| Peak Forward Surge Current (1 s pulse) | 1.0 A |
| Peak Forward Surge Current (1 µs pulse) | 4.0 A |
| Storage Temperature Range (Tstg) | -65 °C to +200 °C |
| Operating Junction Temperature (Ts) | 175 °C |
| Total Device Dissipation (Pp) | 500 mW |
| Breakdown Voltage (By, min) | 75 V |
| Reverse Current (Ik, max at 50 V) | 100 nA |
| Forward Voltage (Vf) at 10 mA | 1.0 V |
| Diode Capacitance (Cj) at 0 V, 1 MHz | 4.0 pF |
| Reverse Recovery Time (trr) at 10 mA, 1 V | 4.0 ns |
The diode can withstand a reverse voltage of up to 50 V.
The DC forward current rating is 400 mA, with a peak forward surge of 1.0 A for a 1 s pulse or 4.0 A for a 1 µs pulse.
It can be stored from –65 °C to +200 °C.