This document describes the absolute maximum ratings and electrical characteristics of the KSC2669 NPN epitaxial silicon transistor. The transistor features high current gain bandwidth product and low saturation voltage.
The KSC2669 is an NPN epitaxial silicon transistor designed for FM radio RF amplification, mixing, conversion, oscillation, and IF amplification. The document lists absolute maximum ratings, electrical parameters, and typical performance curves measured at 25 °C.
Key sections include electrical characteristics such as collector‑base voltage, current gain, and bandwidth product, as well as mechanical data for the TO‑92 package. Trademark and product‑status information are also provided.
| Collector‑Base Voltage (V_CBO) | 35 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 30 V |
| Emitter‑Base Voltage (V_EBO) | 4 V |
| Collector Current (I_C) | 30 mA |
| Power Dissipation (P_D) | 200 mW |
| Junction Temperature (T_J) | 150 °C |
| Storage Temperature (T_ST) | -55 °C to 150 °C |
The maximum collector current is 30 mA.
The collector‑base voltage rating is 35 V.