This document describes the features and characteristics of the 2SB1386 PNP silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, such as excellent DC current gain characteristics and low VCE(SAT) value.
The 2SB1386 is a low‑frequency PNP silicon transistor supplied in an SOT‑89 package. It offers excellent DC current gain, low collector‑emitter saturation voltage, and lead‑free plating options.
The document lists absolute maximum ratings, detailed electrical characteristics such as collector‑base voltage, collector current, power dissipation, and transition frequency, as well as typical characteristic curves for various bias conditions.
| Collector‑Base Voltage (V CBO) | -30 V |
|---|---|
| Collector‑Emitter Voltage (V CEO) | -20 V |
| Collector Current (DC) | 5 A |
| Collector Current (Pulse) | -10 A |
| Power Dissipation | 0.5 W |
| Junction Temperature (Tj) | 150 °C |
The datasheet specifies a maximum DC collector current of 5 A.