The 1SS361K is a silicon epitaxial planar diode designed for ultra‑high‑speed switching applications. It features a low forward voltage (typical 0.9 V at 100 mA) and a fast reverse recovery time (typical 1.6 ns at 10 mA). The device is offered in a small, low‑capacitance package (Cₚ ≈ 0.9 pF).
Key specifications include a maximum reverse voltage of 85 V, peak forward current of 300 mA, average forward current of 100 mA, and power dissipation of 100 mW. Electrical characteristics are provided for a range of test conditions, and the datasheet includes typical forward‑voltage curves and reverse‑recovery graphs.
| Maximum Reverse Voltage (VRM) | 85 V |
|---|---|
| Reverse Voltage (VR) | 80 V |
| Maximum Forward Current (IFM) | 300 mA |
| Average Forward Current (IFAV) | 100 mA |
| Power Dissipation | 100 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Forward Voltage at 1 mA (VF1) | 0.60 V |
| Forward Voltage at 10 mA (VF2) | 0.72 V |
| Forward Voltage at 100 mA (VF3) typical | 0.90 V |
| Forward Voltage at 100 mA (VF3) maximum | 1.20 V |
| Reverse Current at 30 V | 0.1 µA |
| Total Capacitance (Cₚ) at 1 MHz | 0.9 pF (typ) |
| Reverse Recovery Time at 10 mA | 1.6 ns (typ) |
The maximum (peak) reverse voltage is 85 V.
The typical forward voltage at 10 mA is 0.72 V.
The reverse recovery time is typically 1.6 ns at 10 mA.
The diode can be stored from –55 °C up to 125 °C.