HSMS-282x Series Surface Mount RF Schottky Barrier Diodes Data Sheet. These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sam‑ pling, clamping, and wave shaping. The HSMS-282x series of diodes is the best all-around choice for most applica- tions, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.
The HSMS-282x family of surface‑mount Schottky barrier diodes is designed for RF applications such as detectors, mixers and power monitors up to 6 GHz. The series offers low turn‑on voltage, low series resistance and a variety of SOT‑23, SOT‑323 and SOT‑363 package options.
Key features include a typical forward voltage as low as 0.34 V at 1 mA, a peak inverse voltage of 15 V, and high‑isolation variants (HSMS‑282K) with up to 10 dB extra isolation. Detailed electrical specifications, SPICE parameters and mechanical dimensions are provided for designers.
| Forward Voltage (Vf) at 1 mA | 0.34 V |
|---|---|
| Peak Inverse Voltage (PIV) | 15 V |
| Forward Current (1 µs Pulse) | 1 A |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -65 °C to 150 °C |
| Thermal Resistance (CAV) | 500 |
The peak inverse voltage is rated at 15 V.
Typical forward voltage can be as low as 0.34 V at 1 mA.
Store the devices between –65 °C and 150 °C.