This document describes the semiconductor products of SANYO Electric Co., Ltd., which have features such as low noise, high gain, and high cutoff frequency. They are suitable for wide-band low-noise amplifier applications from VHF to UHF.
The 2SC4865 is an NPN epitaxial planar silicon transistor designed for VHF to UHF wide‑band low‑noise amplifier applications. It offers low noise (NF = 1.1 dB typ at 1 GHz), high gain (≈12.5 dB typ at 1 GHz), and a high cutoff frequency of 7 GHz.
Key absolute maximum ratings include a collector‑to‑base voltage of 16 V, collector‑to‑emitter voltage of 8 V, and a collector current rating of 70 mA. Electrical characteristics such as noise figure, gain‑bandwidth product, and output capacitance are detailed for typical bias conditions.
| Collector-to-Base Voltage (Vcbo) | 16 V |
|---|---|
| Collector-to-Emitter Voltage (Vceo) | 8 V |
| Emitter-to-Base Voltage (Vebo) | 2 V |
| Collector Current (Ic) | 70 mA |
| Collector Dissipation (Pc) | 200 mW |
| Noise Figure (NF) at 1 GHz | 1.1 dB typ |
| Gain‑Bandwidth Product | 7.0 GHz typ |
The maximum collector current is 70 mA.
Collector‑to‑Base voltage is 16 V, Collector‑to‑Emitter voltage is 8 V, and Emitter‑to‑Base voltage is 2 V.
The typical noise figure is 1.1 dB at 1 GHz.