This document describes the features and characteristics of the 10 watt Zener diodes produced by Microsemi. These diodes provide voltage regulation in a broad range of 3.9V to 200V and can operate at 10 watts with proper heat sinking and mounting. They are also available for military applications.
This datasheet describes Microsemi's high‑power 10 W Zener diode series covering part numbers 1N2970‑1N3015B and 1N3993‑1N4000A. The devices provide voltage regulation from 3.9 V up to 200 V and are suitable for a broad range of current and temperature conditions.
Key specifications include a maximum power dissipation of 10 W, junction temperature limits of –65 °C to +175 °C, storage limits of –65 °C to +200 °C, and a typical thermal resistance of 10 °C·W⁻¹. The diodes are offered in a DO‑4 (DO‑203AA) hermetically sealed case weighing 7.5 g, with standard polarity configurations indicated by suffixes.
| Zener Voltage Range | 3.9 V to 200 V |
|---|---|
| Maximum Power Dissipation | 10 W |
| Junction Temperature Range | -65 °C to +175 °C |
| Storage Temperature Range | -65 °C to +200 °C |
| Thermal Resistance (junction‑to‑case) | 10 °C·W⁻¹ (typical) |
| Forward Voltage @ 2 A | 1.5 V |
| Weight | 7.5 g |
| Case Type | DO‑4 (DO‑203AA) hermetically sealed |
Each diode can dissipate up to 10 W of power.
Standard polarity is anode to the case (stud) for the 1N2970‑1N3015B series.
Junction temperature is –65 °C to +175 °C, and storage temperature is –65 °C to +200 °C.