This document introduces the product information of the Rev 3 version released in April 2006, including N-channel 500V SuperMESH power MOSFETs such as STD4NK50ZD-1, STD4NK50ZD, STF4NK50ZD, and STP4NK50ZD. The products have been 100% avalanche tested, have extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This series complements the FDmesh advanced technology and combines the advantages of reduced on-resistance, zener gate protection, and outstanding body-drain recovery diode.
