This document introduces the product information of the Rev 3 version released in April 2006, including N-channel 500V SuperMESH power MOSFETs such as STD4NK50ZD-1, STD4NK50ZD, STF4NK50ZD, and STP4NK50ZD. The products have been 100% avalanche tested, have extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This series complements the FDmesh advanced technology and combines the advantages of reduced on-resistance, zener gate protection, and outstanding body-drain recovery diode.
The STD4NK50ZD family consists of N‑channel 500 V MOSFETs available in TO‑220, TO‑220FP, DPAK, and IPAK packages. The devices feature fast body‑drain recovery, low gate charge, and built‑in Zener protection for enhanced ESD capability.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal resistance, avalanche data, and mechanical dimensions, together with characteristic curves and a revision history for the product series.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Continuous drain current (ID) at 25 °C | 3 A |
| Total power dissipation (TO‑220) | 45 W |
| Gate threshold voltage (VGS(th)) | <2.7 V |
| Total gate charge (Qg) | 12 nC |
| Input capacitance (Ciss) | 310 pF |
| Output capacitance (Coss) | 49 pF |
| Avalanche current | 3 A |
The device is rated for a maximum drain‑source voltage of 500 V.
The continuous drain current is rated at 3 A at 25 °C.
The TO‑220 package can dissipate up to 45 W.
The input capacitance (Ciss) is 310 pF.