AT49BV163D(T) is a 2.7-volt 16-megabit Flash memory with features such as single voltage read/write operation, fast read access time, sector erase architecture, fast program and erase time.
This document describes the AT49BV163D (and AT49BV163DT) 16‑megabit flash memory, its voltage range, read/write timing, power consumption, and protection features. It includes pin‑out diagrams for the 48‑lead TSOP and 48‑ball CBGA packages and explains the device’s operation modes such as read, program, erase, and suspend/resume.
The handbook also covers sector organization (31 × 32 KB and 8 × 4 KB sectors), lock‑down functionality, status‑bit handling, the 128‑bit protection register, and the Common Flash Interface (CFI) query mode. Package dimensions and mechanical drawings are provided for board‑level integration.
| Operating Voltage | 2.65 V to 3.6 V |
|---|---|
| Fast Read Access Time | 70 ns |
| Fast Sector Erase Time | 100 ms |
| Active Power Consumption | 10 mA |
| Minimum Erase Cycles | 100,000 |
| Protection Register Size | 128 bits |
| Package Types | 48‑lead TSOP, 48‑ball CBGA |
| Memory Capacity | 16 Mbit (1,048,576 × 16‑bit words or 2,097,152 × 8‑bit bytes) |
| Number of Sectors | 39 (31 × 32 KB, 8 × 4 KB) |
It operates from 2.65 V up to 3.6 V.
The device guarantees a minimum of 100,000 erase cycles.
It contains 39 sectors: thirty‑one 32 KB sectors and eight 4 KB sectors.
The fast read access time is 70 ns.