STMicroelectronics L6387 High-Voltage Driver Datasheet


STMicroelectronics L6387 High-Voltage Driver Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
133 KB
Published
10 April, 2012
Updated
21 May, 2012
Model
L6387
MD5 checksum
1A2ED86C9CAFF544DD075ACB18A9648F

About this manual

The L6387 is a high‑voltage driver designed with BCD‑OFF‑LINE technology for driving independent N‑channel power MOSFETs on both high‑ and low‑side configurations. It supports a voltage rail up to 600 V and features CMOS/TTL Schmitt‑trigger inputs with hysteresis and pull‑down, as well as an internal bootstrap diode.

The document includes absolute maximum ratings, recommended operating conditions, electrical characteristics, pin descriptions, mechanical dimensions, and a legal disclaimer. It also provides detailed information on the bootstrap driver circuit and input logic behavior.

What's inside

  • Description
  • Absolute Maximum Ratings
  • Pin Description
  • Thermal Data
  • Recommended Operating Conditions
  • Electrical Characteristics
  • Input Logic
  • Bootstrap Driver
  • Mechanical Data
  • Legal Disclaimer

Specifications

Output Voltage Range-3 V to Vboot - 18 V
Floating Supply Voltage (Vboot)-1 V to 618 V
Upper Gate Output Voltage (Vhvg)1 V to Vboot
Driver Current Capability400 mA source, 650 mA sink
Switching Times (1 nF load)Rise 50 ns / Fall 30 ns
Total Power Dissipation (Tj = 85 °C)750 mW
Maximum Junction Temperature150 °C
Storage Temperature Range-50 °C to 150 °C
Recommended Switching Frequency400 kHz

Frequently asked questions

What is the output voltage range of the L6387?

The output voltage can range from –3 V to Vboot – 18 V.

What is the recommended switching frequency?

The recommended switching frequency is 400 kHz when the load capacitance is 1 nF.

What driver current capability does the L6387 provide?

It can source 400 mA and sink 650 mA.

What is the maximum power dissipation allowed?

The device can dissipate up to 750 mW at a junction temperature of 85 °C.

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