The IRFPG50 is a third‑generation HEXFET power MOSFET from International Rectifier, offered in a TO‑247 package for industrial applications that require high power handling. The device combines fast switching, low on‑resistance, and rugged design features such as an isolated mounting hole and ease of paralleling.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, capacitance data, switching‑time test circuits, and mechanical dimensions of the TO‑247AC package. It also includes typical output and transfer characteristic curves, gate‑charge information, and thermal impedance graphs to aid designers in selecting and applying the MOSFET.
| Maximum Drain‑to‑Source Voltage (VDS) | 1000 V |
|---|---|
| On‑Resistance (RDS(on)) @ VDS=10V, ID=3.6A | 2.0 Ω |
The IRFPG50 can withstand up to 1000 V drain‑to‑source voltage.
The on‑resistance is listed as 2.0 Ω under those conditions.