This document introduces the SPA-2318 product from Stanford Microdevices, which is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier with high linearity performance, high gain, and high reliability. The product is suitable for W-CDMA systems and multi-carrier applications.
Sirenza Microdevices’ SPA-2318 is a high‑efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier offered in a low‑cost surface‑mountable plastic package. It is designed as a driver amplifier for infrastructure equipment in the 1960 MHz and 2140 MHz bands, providing high linearity for multi‑carrier and digital applications.
The device features on‑chip active bias control, a typical gain of 24 dB at 1960 MHz, and a typical OIP3 of 47 dBm. It is RoHS‑compliant, uses lead‑free green packaging, and includes detailed pin descriptions, absolute maximum ratings, and recommended land patterns for PCB implementation.
| Frequency range | 1700‑2200 MHz |
|---|---|
| Output power | 1 W |
| Typical gain | 24 dB at 1960 MHz |
| Typical OIP3 | 47 dBm |
| Maximum RF input power | 16 dBm |
| RoHS compliance | Yes, lead‑free |
The SPA-2318 operates from 1700 MHz to 2200 MHz.
The typical gain is 24 dB at 1960 MHz.
Yes, the device is RoHS compliant and uses a lead‑free package.