The SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier from Sirenza Microdevices housed in a low cost surface mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable devices that maintain high performance in challenging environments.
The SPA-2118 is a high‑efficiency GaAs HBT power amplifier designed for 850‑950 MHz infrastructure applications. It features on‑chip active bias control, a surface‑mountable plastic package, and delivers up to 1 W output with excellent linearity for multi‑carrier and digital systems.
The document provides detailed specifications, pin functions, absolute maximum ratings, and recommended application schematics. It also includes the evaluation board layout, part‑number ordering information, and package dimensions for designers integrating the device into RF modules.
| Frequency of Operation | 850‑950 MHz |
|---|---|
| Output Third‑Order Intercept (OIP3) | +47 dBm |
| Maximum RF Input Power | 10 dBm |
| Package Type | Surface‑Mountable Plastic Package |
Pin 2 (Vbias) and Pin 4 (Vpc2) are the bias control pins for the active bias network.