SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier produced by Stanford Microdevices. It uses molecular beam epitaxial growth technology to produce reliable and high-performance HBT devices. It is suitable for W-CDMA systems and multi-carrier applications.
The SPA-2318 is a high‑efficiency GaAs HBT power amplifier housed in a low‑cost surface‑mountable plastic package. It delivers 1 W output at 2150 MHz, features on‑chip active bias control, 23 dB typical small‑signal gain, and a typical OIP3 of +47 dBm, making it suitable for multi‑carrier and digital applications.
Designed for infrastructure equipment in the 2150 MHz PCS band, the device is used in W‑CDMA and other multi‑carrier systems. The datasheet provides detailed specifications, pin descriptions, absolute maximum ratings, ordering information, and recommended land‑pattern for PCB layout.
| Frequency of Operation | 2110‑2170 MHz |
|---|---|
| Output Power at 1 dB Compression | 28 dBm |
| Small Signal Gain | 23 dB |
| Input VSWR | 1.5:1 |
| Output Third‑Order Intercept Point (OIP3) | +47 dBm |
| Noise Figure | 5.0 dB |
| Device Current (Ibias / Ic1 / Ic2) | 10 mA / 70 mA / 320 mA |
| Supply Current (Vcc = 5 V) | 150 mA (typ.) / 750 mA (max) |
The device delivers about 28 dBm output power at the 1 dB compression point.
The small‑signal gain is typically 23 dB.
The maximum supply currents are 150 mA for VCC and 750 mA for the other supply pin.