THSHIBA TC7S86F TC7S86FU Manual(1)


THSHIBA TC7S86F TC7S86FU Manual(1) - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
228 KB
Published
01 April, 2012
Updated
24 May, 2012
MD5 checksum
F431F7B585F0CA2C0DE4E82DF4CEE80A

About this manual

The TC7S86F/FU is a high‑speed C7MOS exclusive‑OR gate offering low power dissipation, high noise immunity, and balanced propagation delays. It includes input protection and output drive capability suitable for a wide operating voltage range.

The document provides electrical characteristics, recommended operating conditions, package dimensions, and usage restrictions for general electronics applications.

What's inside

  • Features
  • Maximum Ratings
  • Recommended Operating Conditions
  • Electrical Characteristics
  • Package Dimensions
  • Restrictions on Product Use

Specifications

Supply Voltage Range2 V ~ 6 V
Operating Temperature-40 °C ~ 85 °C
Power Dissipation200 mW
Storage Temperature-65 °C ~ 150 °C
Lead Temperature (10 s)260 °C

Frequently asked questions

What is the supply voltage range for the TC7S86F/FU?

The device operates with a supply voltage from 2 V to 6 V.

What temperature range can the TC7S86F/FU operate in?

It is specified for operation between –40 °C and 85 °C.

How much power does the TC7S86F/FU dissipate?

The maximum power dissipation is 200 mW.

What are the storage temperature limits for the device?

The device can be stored from –65 °C to 150 °C.

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