THSHIBA TC7S86F TC7S86FU Manual(1)(1)


THSHIBA TC7S86F TC7S86FU Manual(1)(1) - cover page
Brand
Toshiba
Category
INTEGRATED CIRCUITS
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
228 KB
Published
01 April, 2012
Updated
29 September, 2023
MD5 checksum
B3DBCB36677DBCB25F57906F98EAB113

About this manual

The TC7S86F/FU is a high‑speed C?MOS exclusive‑OR gate offering low power dissipation, high noise immunity, and balanced propagation delays. It includes input protection, symmetrical output impedance, and a wide operating voltage range.

The document lists maximum ratings, recommended operating conditions, electrical characteristics, package dimensions, and usage restrictions for general electronics applications. It also provides a truth table and notes on handling and reliability.

What's inside

  • Features
  • Maximum Ratings
  • Recommended Operating Conditions
  • Electrical Characteristics
  • Package Dimensions
  • Truth Table
  • Restrictions on Product Use

Specifications

Supply Voltage (Vcc)5 V
Supply Current (Icc)1 µA max
Supply Voltage Range2–6 V
Input Voltage Range0–Vcc
Operating Temperature-40 °C to 85 °C
Propagation Delay (typ)10 ns
Power Dissipation200 mW
Storage Temperature-65 °C to 150 °C
Lead Temperature (10 s)260 °C

Frequently asked questions

What is the supply voltage range for the TC7S86F/FU?

The device operates with a supply voltage between 2 V and 6 V.

What is the typical propagation delay of the TC7S86F/FU?

Typical propagation delay (tpLH) is about 10 ns.

What is the maximum power dissipation of the TC7S86F/FU?

Maximum power dissipation is specified as 200 mW.

What temperature range is recommended for operating the TC7S86F/FU?

The recommended operating temperature is from –40 °C to 85 °C.

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