TLP190B is a TOSHIBA photocoupler. It consists of a GaAℓAs light emitting diode and a series connected photodiode array. It is suitable for MOS FET gate drive.
This document describes the Toshiba TLP190B GaAs infrared photocoupler, a miniature surface‑mount device that combines an LED and a photo‑diode array for MOSFET gate drive applications. It includes absolute maximum ratings, pin configuration, and detailed electrical parameters.
The datasheet also gives recommended operating conditions, isolation and switching characteristics, and important reliability and usage restrictions for designers integrating the part into electronic systems.
| Open voltage (Voc) | 7.0 V (min.) |
|---|---|
| Short current (Isc) | 12.0 µA (min.) |
| Isolation voltage | 2500 Vrms (min.) |
| Forward voltage (VF) at IF=10 mA | 1.2 V – 1.7 V |
| Reverse current (IRD) at VR=10 V | 1 nA (max.) |
| Capacitance (C) | 30 pF – 60 pF |
| Operating temperature (Topr) | -25 °C to 85 °C |
The minimum isolation voltage is 2500 Vrms for AC, 1 minute.
The recommended forward current is 20 mA to 25 mA typical.
The device can operate from –25 °C up to 85 °C.
Typical forward voltage is about 1.4 V (range 1.2 V to 1.7 V).