This document is about the technical data of TOSHIBA TLP665J(S), including product features, parameters, certifications, etc.
The Toshiba TLP665J(S) is a GaAs infrared emitting diode optically coupled to a photo‑triac in a six‑lead DIP package. The document provides absolute maximum ratings, electrical characteristics, recommended operating conditions, and mechanical dimensions for designers.
Key data include isolation voltage, on‑state and off‑state ratings, forward current limits, and temperature ranges. The sheet also lists compliance approvals (UL1577, EN60065, etc.) and usage restrictions for safety‑critical applications.
| Peak off‑state voltage | 600 V (Min.) |
|---|---|
| Trigger LED current | 10 mA (Max.) |
| Isolation voltage | 5000 Vrms (Min.) |
| Forward current IF | 50 mA |
| Peak forward current (100 µs pulse, 100 pps) | 1 A |
| Peak on‑state current ITP | 2 A |
| Peak non‑repetitive surge current | 1.2 A |
| Junction temperature Tj | 115 °C |
| Operating temperature range | -40 °C to 100 °C |
The device is rated for an isolation voltage of 5000 Vrms (minimum).
The recommended forward current is typically 15 mA to 25 mA, with a typical value of 20 mA.