TLP631,TLP632 is a bidirectional silicon photocoupler produced by Toshiba. It consists of an infrared emitting diode and a phototransistor. The former emits near-infrared light and the latter receives infrared light. The two are isolated from each other by an insulating layer, which can meet the requirements of high voltage, high power, high noise and high frequency applications.
The document provides detailed electrical characteristics, absolute maximum ratings, and recommended operating conditions for the Toshiba TLP631 and TLP632 GaAs infrared photocouplers. It includes pin configurations, isolation specifications, switching times, and usage restrictions for general electronics applications.
Key data such as forward current, isolation voltage, collector‑emitter voltage, power dissipation, and current transfer ratio are listed, along with guidance on reliable design and handling of the devices.
| Forward current (IF) | 60 mA |
|---|---|
| Isolation voltage | 5000 V rms (min) |
| Power dissipation (Po) | 150 mW |
| Supply voltage (Voc) | 5 V to 24 V |
| Current transfer ratio (CTR) | 50 % (min) |
The isolation voltage is specified as 5000 V rms (minimum) for AC, 1‑minute tests.
The recommended supply voltage range is 5 V to 24 V.
The minimum CTR is 50 %.