NXP BUJ and PHx series of high voltage power bipolar transistors use planar technology that delivers industry-leading cost-performance ratios. The high-voltage (up to 1200 V) capability is suitable for push-pull technologies. Fast switching times and low VCEsat ratings combine to reduce switching and conduction losses. The well-controlled hFE parameter reduces the need for banding or selection, making design-in easier and extending reliability. Versions with integrated diodes reduce component count and simplify the design even further.
The BUJ and PHx series are high‑voltage power bipolar transistors designed for energy‑efficient lighting, SMPS, and industrial applications. They support voltages up to 1200 V, offer fast switching, low saturation voltage, and optional integrated diodes that simplify circuit design.
The note provides design guidance for the base‑drive circuit, explains the impact of transistor gain on power loss, lists available package types, and outlines the product portfolio and customer support options.
| Maximum voltage rating | 1200 V |
|---|---|
| Package types | TO‑92, TO‑220AB, DPAK, SOT‑78, SOT‑428 |
| Integrated diode option | Available |
They are rated for high‑voltage operation up to 1200 V.
Integrated diode versions reduce component count, simplify circuit design, and improve performance and reliability.
The transistors are offered in TO‑92, TO‑220AB, DPAK, SOT‑78, and SOT‑428 packages.