NXP's low VCEsat(BISS) transistors offer lower power losses and higher efficiency than their standard transistor counterparts, and they deliver the required performance in smaller packages that save PCB space. Choose from single and double transistors, resistor-equipped transistors (RETs), or load switches, which combine a low VCEsat transistor with a RET in a single package.
This document introduces NXP’s fourth‑generation low VCEsat (BISS) transistors, which provide reduced power dissipation, ultra‑low saturation voltage and small SMD packages. It covers single and double transistors, resistor‑equipped transistors (RETs) and load‑switch modules, emphasizing space‑saving and energy‑efficient designs.
The leaflet lists the available package types, typical electrical parameters such as VCEsat and collector current, and a range of applications including portable devices, power‑management circuits, battery chargers, DC/DC converters and LED drivers. Product part numbers and dimensional data are provided for each variant.
| Maximum collector current | 160 mA |
|---|---|
| Package types | SOT23, SOT457 (SC‑74), SOT89 (SC‑62), SOT223 (SC‑73), SOT96 (SO‑8) |
The transistors are offered in SOT23, SOT457 (SC‑74), SOT89 (SC‑62), SOT223 (SC‑73) and SOT96 (SO‑8) packages.