G8205T is a dual N-channel enhancement mode MOSFET from WINNING, with a maximum voltage of 20V, a maximum current of 4A, and a minimum RDS(ON) of 30mΩ and a maximum RDS(ON) of 45mΩ
The G8205T is a dual N‑channel enhancement mode MOSFET offered in a TSOP‑6 surface‑mount package. It features a high‑density cell design for low on‑resistance and rugged reliability. The document provides electrical, thermal, and mechanical specifications, as well as characteristic curves.
Key sections include product summary, electrical characteristics, thermal characteristics, characteristic graphs, switching test information, and package dimensions for both the component and its carrier tape & reel.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +10 V |
| Pulsed Drain Current | 25 A |
| Drain‑Source Diode Forward Current | 2 A |
| Maximum Power Dissipation | 1.25 W |
| Operating Temperature Range | -55 °C to 150 °C |
| Thermal Resistance (J‑A) | 100 °C/W |
| Package Type | TSOP‑6 |
The G8205T is supplied in a TSOP‑6 surface‑mount package.
The device can dissipate up to 1.25 W.
It operates from –55 °C up to 150 °C.