This document mainly introduces the information contained in the Philips power MOS data sheet, including quick reference data, limit values, thermal resistance, static characteristics, dynamic characteristics, reverse diode limit values and characteristics, avalanche limit values, and graphic data.
This document provides the key specifications and application information for Philips power MOSFET devices. It includes quick reference data, maximum ratings, thermal resistance, dynamic parameters, diode limits, avalanche limits and graphical data.
The data are organized into sections such as Quick Reference Data, Maximum Ratings, Thermal Resistance, Dynamic Characteristics, Reverse Diode Limits, Avalanche Limits, Graphical Data and Safe Operating Area, helping engineers select and use the devices safely. This manual is written in Chinese.
| Maximum Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Thermal Resistance (junction‑to‑case) | 2 K/W |
| Maximum Power Dissipation at 25 °C | 10 W |
| Maximum Junction Temperature | 175 °C |
The devices can withstand up to 100 V between drain and source.
The junction‑to‑case thermal resistance is 2 K/W.
The MOSFET can dissipate up to 10 W when the case temperature is 25 °C.
The device’s maximum junction temperature is 175 °C.