This document introduces Powerex IGBTMOD™ HVIGBT modules, which have features such as low drive power, low VCE(sat), and super-fast recovery free-wheel diodes. They are suitable for applications such as traction, medium voltage drives, and high voltage power supplies.
The CM1200DC-34N is a dual IGBT HV module designed for high‑power switching applications. It integrates two IGBT transistors and a free‑wheel diode in a half‑bridge configuration, offering simplified assembly and thermal management.
Key specifications include a 1700 V collector‑emitter rating, 1200 A continuous collector current, and a typical module weight of 0.8 kg. Detailed electrical, thermal, and mechanical characteristics are provided to aid designers in selecting and integrating the module into medium‑voltage drives, power supplies, and high‑voltage power systems.
| Collector‑Emitter Voltage (VcES) | 1700 Volts |
|---|---|
| Gate‑Emitter Voltage (VGE) | +20 Volts |
| Collector Current (DC) | 1200 Amperes |
| Peak Collector Current (Pulse) | 2400 Amperes |
| Maximum Power Dissipation | 6500 Watts |
| Module Weight (Typical) | 0.8 kg |
| Isolation Voltage (RMS, 60 Hz, 1 min) | 4000 Volts |
| Max. Mounting Torque M8 Screws | 177 in‑lb |
The module is rated for a continuous collector current of 1200 A.
It has a collector‑emitter voltage rating of 1700 V and a gate‑emitter voltage rating of +20 V.
The typical weight of the module is about 0.8 kg.
The isolation voltage is rated at 4000 V RMS for a 1‑minute sinusoidal test at 60 Hz.