2SC5106 is a silicon NPN epitaxial planar type transistor produced by Toshiba. Its package type is SC-59, the maximum working voltage is 10V, the maximum working current is 30mA, and the maximum working temperature is 125℃.
This document presents the key specifications of the Toshiba 2SC5106 NPN epitaxial transistor, including absolute maximum ratings, electrical characteristics, and S‑parameter measurements. It also contains handling guidelines and usage restrictions for the device.
The datasheet is intended for designers and engineers who need detailed performance data such as voltage limits, current capabilities, gain classifications, and frequency response. It also outlines storage conditions and advises against use in safety‑critical or regulated applications. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 20 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 10 V |
| Emitter‑Base Voltage (Vebo) | 3 V |
| Maximum Collector Current (Ic) | 30 mA |
| Power Dissipation (Pc) | 150 mW |
| Storage Temperature Range | -55 °C to 125 °C |
The maximum collector current is 30 mA.
The device can be stored from –55 °C to 125 °C.