About this manual
The S3C44B0X datasheet provides a detailed description of the internal memory controller, which supplies two sets of control signals for external memory operations. It outlines the selectable endian mode, address space per bank, and programmable bus widths for each of the eight memory banks.
The document also defines the BWSCON and BANKCON registers that configure bus width, wait states, and timing parameters for ROM, SRAM, and DRAM/SDRAM banks, as well as the REFRESH register that controls DRAM refresh modes and timing. This manual is written in Chinese.
What's inside
- Overview
- Memory Controller Features
- Bank Configuration
- Register Definitions
- Refresh Control
Specifications
| Address space per bank | 32M bytes |
|---|
| Total number of memory banks | 8 |
|---|
| Programmable bus width | 8/16/32 bits |
Frequently asked questions
How many memory banks does the S3C44B0X provide?
The device provides eight memory banks.
How can the bus width of each bank be configured?
Bus width is set via the BWSCON register for most banks and via the OM[1:0] pins for the BOOT ROM bank.