RN2110F and RN2111F are PNP transistors produced by Toshiba. They are suitable for switching, inverter, interface, and driver circuits. They have a super small package (ESM) that is suitable for ultra-high density installation. By integrating bias resistors, the number of components can be reduced, enabling equipment miniaturization and simplified assembly. They offer various resistance values to suit diverse circuit designs.
The RN2110F and RN2111F are PNP silicon epitaxial transistors with an integrated bias resistor, designed for compact, high‑density mounting. They are offered in an ultra‑small package suitable for inverter, driver, and interface circuits.
The document lists maximum ratings, electrical characteristics such as breakdown voltages, collector current, power dissipation, and typical DC current gain, as well as handling and safety notices for semiconductor use. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 50 V |
| Emitter‑Base Voltage (VEgo) | 5 V |
| Collector Power Dissipation (Pc) | 100 mW |
| Maximum Junction Temperature | 150 °C |
| Operating Temperature Range | -55 °C to 150 °C |
The collector‑base breakdown voltage is 50 V.