This document describes the features and characteristics of P-Channel enhancement mode power field effect transistors. They have rated currents and voltages of -5.5A and -6.5A, -150V and -200V, with rDS(ON) values of 0.8Ω and 1.2Ω. They have nanosecond switching speeds, linear transfer characteristics, and high input impedance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.