Industrial

The document describes a low voltage CMOS hex inverter product called 74LVX04. The product is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology, making it ideal for low power, battery operated and low noise 3.3V applications. It combines high speed performance with true CMOS low power consumption and high noise immunity. All inputs and outputs of the product are equipped with protection circuits against static discharge, providing 2KV ESD immunity and transient excess voltage protection.

74LVX86 is a low voltage CMOS QUAD EXCLUSIVE OR GATE with 5V tolerant inputs. It is ideal for low power, battery operated and low noise 3.3V applications. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

This document describes the features and characteristics of the 74LVX32, a low voltage CMOS quad 2-input OR gate with 5V tolerant inputs. It includes high-speed performance, low power dissipation, low noise, and input/output protection circuits.

The 74LVX14 is a low voltage CMOS hex schmitt inverter fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V system. It combines high speed performance with the true CMOS low power consumption.

The document describes a low voltage CMOS quad 2-input AND gate, ideal for low power, battery operated, and low noise 3.3V applications. It combines high-speed performance with true CMOS low power consumption.

This document describes the 74LVX02, a low voltage CMOS quad 2-input NOR gate. It is fabricated using sub-micron silicon gate and double-layer metal wiring C2MOS technology. The 74LVX02 is ideal for low power, battery operated, and low noise 3.3V applications. It offers high speed performance and true CMOS low power consumption. The internal circuit consists of three stages, including a buffer output that provides high noise immunity and stable output. The device features power down protection on all inputs, allowing it to accept input voltages from 0 to 7V regardless of the supply voltage. It can be used to interface 5V to 3V systems. The 74LVX02 also includes protection circuits against static discharge, providing 2KV ESD immunity and transient excess voltage protection.

The 74LVX00 is a low voltage CMOS QUAD 2-INPUT NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power, battery operated and low noise 3.3V applications.

The 74VHC238 3 TO 8 LINE DECODER is a high-performance CMOS 3-select-8 decoder produced by National Semiconductor

The 74VHC138 is an advanced high-speed CMOS 3 TO 8 LINE DECODER (INVERTING) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

74VHC27 is an advanced high-speed CMOS TRIPLE 3-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It features high speed, low power dissipation, high noise immunity, wide negative voltage range for the inputs and can drive 5V to 3V loads.

74VHC05 is a high-speed CMOS open drain hex inverter fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.

The 74VHC157 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The 74VHC74 is a high-performance CMOS dual D-type flip-flop with preset and clear

The document describes an advanced high-speed CMOS octal D-type flip-flop with 3-state outputs non-inverting. It is fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology, and it features high noise immunity, low power dissipation, and low noise.

The document describes an advanced high-speed CMOS octal D-type latch with three-state outputs and non-inverting function. The product is fabricated using sub-micron silicon gate and double-layer metal wiring C2MOS technology, and it features high noise immunity, low power dissipation, and low noise. It has power down protection on inputs and is compatible with 5V to 3V interfaces. All inputs and outputs are equipped with protection circuits against static discharge, providing 2KV ESD immunity and transient excess voltage protection.