FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications
This document provides a technical overview of the CTC 1N5820, 1N5821, and 1N5822 Schottky Barrier Rectifiers. These devices feature a metal-semiconductor junction with a guard ring and epitaxial construction, designed for low forward voltage drop and high current capability in applications such as inverters and polarity protection.
| Reverse Voltage (VRRM) | 20, 30, or 40 V |
|---|---|
| Forward Current (TF) | 3.0 A |
| Operating Temperature Range | -55 to +125 C |
These devices are intended for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
The maximum average forward rectified current is 3.0 A.
For capacitive load, you must derate the current by 20%.