NXP Manuals

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150

Standard level N-channel MOSFET in LFPAK package qualified to 175

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

The LPC11U6x/Ex are an ARM Cortex-M0+ based, low-cost 32-bit MCU family operating at CPU frequencies of up to 50 MHz. The LPC11U6x/Ex support up to 256 kB of flash memory, a 4 kB EEPROM, and 36 kB of SRAM. The ARM Cortex-M0+ is an easy-to-use, energy-efficient core using a two-stage pipeline and fast single-cycle I/O access. The peripheral complement of the LPC11U6x/Ex includes a DMA controller, a CRC engine, one full-speed USB device controller with XTAL-less low-speed mode (LPC11U6x onl

The PCF85063x are a family of CMOS Real-Time Clocks (RTC) and calendar optimized for low power consumption. Different features sets are available. The OM11059A is the ideal evaluation/demo board to use in the design phase of any project, just power and I2C-bus must be hooked up. A separate demoboard and a user manual are available for the SPI-bus RTC

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150

Assumed an LCD with a certain resolution, a defined LCD drive mode (commonly called multiplex rate) and a defined LCD bias configuration (commonly called bias system), the display contrast depends on the VLCD voltage, also called operating voltage of the display.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP