Infineon manuals, page 35
INFINEON IPP90R1K0C3 Manual
The IPP90R1K0C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg, extreme dv/dt ratings, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant, ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.
INFINEON SPA15N60CFD Manual
The SPA15N60CFD is a power transistor produced by STMicroelectronics. It has an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, and has been qualified according to JEDEC1) for target applications. It is designed for softswitching PWM stages and LCD and CRT TVs.
INFINEON IPP60R199CP Manual
IPP60R199CP CoolMOSTM power transistors feature the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, and are qualified according to JEDEC1) for target applications. They have Pb-free lead plating and are RoHS compliant. CoolMOS CP is specially designed for hard switching topologies in server and telecom applications.
INFINEON SPW47N60CFD Manual
The SPW47N60CFD is a CoolMOSTM power transistor with new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant.
INFINEON BUP 213 Manual
This datasheet provides the technical specifications of the BUP 213 IGBT, including maximum ratings, dynamic characteristics, and static characteristics.
INFINEON IKW15T120 Manual
IKW15T120 is a high power IGBT module from Infineon, using NPT technology, with low EMI, low gate charge, low loss, short circuit withstand time of 10 microseconds, very soft, fast recovery anti-parallel EmCon HE diode, etc., suitable for frequency converters and uninterruptible power supplies.
INFINEON BSP135 Manual
BSP135 SIPMOS® is a N-channel, depletion mode, dv/dt rated small-signal transistor with a maximum rating of T j=25°C, unless otherwise specified.
INFINEON SPD03N60C3/SPU03N60C3 Manual
This document introduces the characteristics and parameters of Panasonic 1200V 600A IGBT.
INFINEON PROFET ITS 640S2 Manual
This document describes the features and applications of PROFET® ITS 640S2 Infineon Technologies AG, including short circuit protection, current limitation, proportional load current sense, CMOS compatible input, etc.
INFINEON BAS21... Manual
The BAS21 is a silicon switching diode from ON Semiconductor that is characterized by its high switching speed and high breakdown voltage.
INFINEON BSS138W G Manual
The BSS138W G SIPMOS® small-signal transistor features N-channel, enhancement mode, logic level, dv/dt rated, Pb-free lead-plating; RoHS compliant
INFINEON IPD60R520CP Manual
This document describes the features and characteristics of IPD60R520CP CoolMOSTM power transistor, including lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc.
INFINEON IPA60R520CP Manual
IPA60R520CP CoolMOSTM power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) for target applications and complies with RoHS.
INFINEON TDA5251 F1 ASK/FSK 315MHz Wireless Transceiver Manual
TDA5251 F1 ASK/FSK 315MHz Wireless Transceiver Preliminary Specification
INFINEON SPB11N60C3 Manual