Philips manuals, page 24
PHILIPS BFG67; BFG67/X; BFG67/XR handbook
This document describes the features and characteristics of the BFG67 series NPN 8 GHz wideband transistors, including high power gain, low noise figure, high transition frequency, and excellent reliability due to gold metallization. These products are suitable for wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.
PHILIPS BFG591 handbook
This document describes the features and characteristics of the BFG591 NPN 7 GHz wideband transistor, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. The product is intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.
PHILIPS BFG590 BFG590/X handbook
This document describes the features of the NPN 5 GHz wideband transistors BFG590 and BFG590/X, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. They are suitable for use in MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range, ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
PHILIPS BFG590W; BFG590W/X handbook(1)
PHILIPS BFG590W; BFG590W/X handbook
PHILIPS BFG590; BFG590/X handbook
PHILIPS BFG541 handbook
Philips BFG541 NPN 9 GHz wideband transistor, features high power gain, low noise figure, high transition frequency, gold metallization ensures excellent reliability
PHILIPS BFG540W BFG540W/X BFG540W/XR handbook
The BFG540W is a NPN 9 GHz wideband transistor with high power gain, low noise figure and high transition frequency. It is suitable for RF front end wideband applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fiber-optic systems.
PHILIPS BFG540 BFG540/X BFG540/XR handbook
This document describes the features and characteristics of the BFG540 series wideband transistors, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. These transistors are intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, satellite TV tuners, MATV/CATV amplifiers, and repeater amplifiers in fiber-optical systems.
PHILIPS BFG520 BFG520/X BFG520/XR handbook(1)
This data sheet introduces the features and characteristics of the BFG520/X/XR model NPN 9GHz wideband transistor products, including high power gain, low noise figure, and high transition frequency. The product is suitable for applications in the GHz range of the RF front end, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fiber-optic systems.
PHILIPS BFG520W BFG520W/X handbook
PHILIPS BFG520 BFG520/X BFG520/XR handbook
This document describes the features and characteristics of the BFG520 series NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency. They are intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.
PHILIPS BFG505 BFG505/X handbook(1)
PHILIPS BFG505W BFG505W/X BFG505W/XR handbook
BFG505W is a NPN 9GHz wideband transistor produced by Philips Semiconductors. It features high power gain, low noise figure and high transition frequency. It is mainly used for RF front end applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).
PHILIPS BFG505W BFG505W/X handbook
This document describes the features and characteristics of BFG505W and BFG505W/X NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency.