SAMSUNG Manuals

KM6164002 is a CMOS SRAM product with high performance and reliability. It is designed with low power consumption and suitable for various applications.

KM416V4004C,KM416V4104C CMOS DRAM is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. This family offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

This datasheet provides the specifications of K6F4016U4G series products, including operating temperature range, voltage range, speed, power consumption, package type, standby current, operating current, etc.

K4M56323LE is a synchronous high data rate Dynamic RAM fabricated with SAMSUNG's high performance CMOS technology. It has various features and functions, including LVCMOS compatibility, four banks operation, MRS cycle, and EMRS cycle.

The K4M511533E - Y(P)C/L/F is a synchronous high data rate dynamic random access memory released by Samsung. Its capacity is 536,870,912 bits, organized as 4 x 8,388,608 words x 16 bits, and manufactured with Samsung's high performance CMOS technology. The device adopts a synchronous design, which allows precise cycle control by using the system clock, and I/O transactions are possible on every clock cycle. The device supports a variety of operating frequencies, programmable burst lengths and programmable latencies, making it suitable for a variety of high bandwidth and high performance memory system applications.

This is a technical specification document for 512Mb C-die DDR SDRAM 66 TSOP-II with Pb-Free (RoHS compliant)

This document is a DDR SDRAM 4GB Registered DIMM specification, which mainly introduces the product's features and characteristics, including product composition, working frequency, density, organization structure, component composition, height, speed, etc.

This document provides specifications and features of OneNAND256 flash memory, including different models with voltage, temperature range, and packaging options.

This document introduces the specifications of three Samsung OneNAND flash memory products (1GB, 2GB and 4GB)

LT104S1-101 is a voltage reference produced by LT company. It has high accuracy, low noise, low power consumption, high stability and other characteristics.