SAMSUNG Manuals

The S1M8831A/33 is a dual synthesizer supporting RF and IF frequencies up to 1.2GHz RF and 520MHz IF. It uses the ∑-∆ fractional-N technology to solve the fractional spurs problem in other fractional-N synthesizers based on charge pump compensation. The device also supports accurate programming of the PCS/CDMA channel frequency in 10kHz steps.

OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY is a product of Samsung Electronics Company. It contains information about density, model, power, temperature, package.

M470L1624FT0-C(L)B3/A2/B0 is a 128MB DDR SDRAM SODIMM memory module from Samsung. It uses 256Mb F-die chips, supports 64-bit and 72-bit data width, and has a frequency of 133MHz and 166MHz with timing of 2.5-3-3 and 2.5-3-3.

The Samsung M366S1723DTS PC133/PC100 Unbuffered DIMM is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

The document introduces the features and characteristics of the KS88C4616/C4632 series of single-chip 8-bit CMOS microcontrollers launched by Samsung Electronics Co., Ltd. These microcontrollers have a fast and efficient CPU, a variety of integrated peripherals, and programmable ROM.

KM416C4000C and KM416C4100C are two CMOS DRAM chips. They are both 4Mx16 bit Fast Page Mode DRAMs and have high speed random access capability to memory cells within the same row. Their refresh cycles (4K Ref. or 8K Ref.) and access times (-5 or -6) are optional, and they all have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. These chips are manufactured using Samsung's advanced CMOS process to realize high bandwidth, low power consumption and high reliability.

K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.

This document is a version history record of the DDR SDRAM DDR SDRAM specification, describing the different versions and revisions of the product.

KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. It features fast access time, low power dissipation standby, single 5V power supply, and is designed for high-density high-speed system applications.

This is a 32Kx8 bit high-performance CMOS static RAM, operating voltage is 5V, suitable for commercial and industrial temperature range.

The K4S161622H is a 16,777,216-bit synchronous high data rate dynamic random access memory organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latency

The KB2147 is a monolithic integrated circuit designed to control all the functions related to the horizontal and vertical deflection in multimodes or multisync monitors. It features self-adaptive frequency range, X-ray protection input, adjustable duty-cycle, wide range DC controlled H-position, etc.

This document is an introduction to the MultiMediaCardTM specification, detailing the version history and changes of the product. The specification mainly covers the technical specifications and features of the MultiMediaCardTM, including command response timing, SPI bus timing, power consumption, memory array structure, etc.