STMicroelectronics Manuals - Page 86

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STMicroelectronics manuals, page 86

  • ST M93S66 M93S56 M93S46 4Kbit 2Kbit 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection handbook

    Features and characteristics of M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection

  • ST M24C16-x M24C08-x M24C04-x M24C02-x M24C01-x 16 Kbit 8 Kbit 4 Kbit 2 Kbit 1 Kbit serial I C bus EEPROM handbook

    This document describes the features and characteristics of the M24C16-x, M24C08-x, M24C04-x, M24C02-x, and M24C01-x series products, including support for both the 100 kHz I2C Standard-mode and the 400 kHz I2C Fast-mode, write control input, byte and page write (up to 16 bytes), random and sequential read modes, self-timed programming cycle, automatic address incrementing, enhanced ESD/latch-up protection, more than 1 million write cycles, and more than 40-year data retention.

  • ST M93C86 M93C76 M93C66 M93C56 M93C46 16 Kbit 8 Kbit 4 Kbit 2 Kbit 1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM handbook

    This datasheet details the features and characteristics of STMicroelectronics' M93Cx6 series of MICROWIRE® serial access EEPROMs. The family includes 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) devices.

  • ST M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 32-Kbit serial I C bus EEPROM handbook

    This is a product information about the M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 32-Kbit serial I²C bus EEPROM datasheet

  • ST M48Z35 M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM handbook

    The document describes the features and characteristics of the M48Z35 and M48Z35Y, two 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM products, including integrated ultra low power SRAM, power-fail control circuit, and battery, equal READ and WRITE cycle time, automatic power-fail chip deselect and WRITE protection, etc.

  • ST M48Z58/M48Z58Y handbook

    M48Z58 and M48Z58Y are integrated, ultra low power SRAMs with power-fail control circuit and battery. They are 5V, 64 Kbit (8 Kbit x 8) ZEROPOWER® SRAMs. They have automatic power-fail chip deselect and WRITE protection features, and support different WRITE protect voltages. They come in CAPHAT™ DIP package with a self-contained battery, and also provide a 28-lead SOIC and SNAPHAT® top (to be ordered separately) packaging options. They are pin and function compatible with JEDEC standard 8 Kbit x 8 SRAMs and are RoHS compliant.

  • ST M48Z08 M48Z18 5 V 64 Kbit (8 Kb x 8) ZEROPOWER SRAM handbook

    This document describes the features and characteristics of the M48Z08 and M48Z18 5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAMs.

  • ST M48Z02 M48Z12 5 V 16 Kbit (2 Kb x 8) ZEROPOWER SRAM handbook

    This document describes the features and characteristics of the M48Z02 and M48Z12 models of 5V, 16Kbit ZEROPOWER® SRAM products, including integrated ultra low power SRAM and power-fail control circuit, unlimited WRITE cycles, and equal READ and WRITE cycle time.

  • ST M24128-125 Automotive 128-Kbit serial I C bus EEPROM handbook

    The M24128-125 is a 128-Kbit serial I²C bus EEPROM featuring: compatibility with all I2C bus modes (400 kHz Fast mode, 100 kHz Standard mode), 128 Kbit (16 Kbytes) of EEPROM array, 64 bytes page size, 5 ms write byte write time, 5 ms page write time, 2.5 V to 5.5 V single supply voltage, -40 °C to +125 °C operating temperature range, random and sequential read modes, whole memory array write protection, enhanced ESD/Latch-Up protection, more than 1 million write cycles and more than 40 years data retention.

  • ST M95256-125 Automotive 256-Kbit serial SPI bus EEPROM handbook

    The M95256-125 is a STMicroelectronics automotive 256-Kbit serial SPI bus EEPROM with the following features: compatible with the Serial Peripheral Interface (SPI) bus; memory array 256 Kb (32 Kbytes) of EEPROM; page size: 64 bytes; write byte write within 5 ms; page write within 5 ms; write protection: quarter, half or whole memory array; high speed clock: 5 MHz; single supply voltage: 4.5 V to 5.5 V; operating temperature range: from -40°C up to +125°C; enhanced ESD protection; more than 1 million write cycles; more than 40 years data retention; RoHS compliant and halogen-free (ECOPACK®) SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width.

  • ST M95320-125 Automotive 32-Kbit serial SPI bus EEPROM with high-speed clock handbook

    M95320-125 is a 32-Kbit serial SPI bus EEPROM with high-speed clock released by ST company. Its features include: compatible with Serial Peripheral Interface (SPI) bus, 32 Kb (4 Kbytes) of EEPROM, page size of 32 bytes, fast write speed, page write within 5 ms, write protection, single supply voltage, wide operating temperature range, ESD protection and long data retention.

  • ST M95512-125 Automotive 512-Kbit serial SPI bus EEPROM handbook

    M95512-125 is a 512Kbit serial SPI bus EEPROM produced by ST company. It has features such as SPI bus compatibility, 512 Kb (64 Kbytes) of EEPROM, page size of 128 bytes, fast write speed, wide voltage range, wide temperature range and ESD protection.

  • ST M95640-125 Automotive 64-Kbit serial SPI bus EEPROM with high-speed clock handbook

    The M95640-125 is a 64kbit automotive serial SPI bus EEPROM with high-speed clock (10MHz) from ST.

  • ST M24C32-125 Automotive 32-Kbit serial I C bus EEPROM handbook

    The M24C32-125 is ST's automotive 32-Kbit serial I²C bus EEPROM, supporting 400 kHz fast mode and 100 kHz standard mode. It has a 32Kbit (4Kbyte) EEPROM memory array, a page size of 32 bytes, a write time of 5ms, a single supply voltage of 2.5V to 5.5V, a working temperature range of -40°C to +125°C, support for random and sequential read modes, write protection of the entire memory array, enhanced ESD/Latch-Up protection, more than 1 million write cycles, and data retention of more than 40 years.

  • ST M24C64-125 Automotive 64-Kbit serial I C bus EEPROM handbook

    The M24C64-125 is a 64Kbit automotive serial I2C bus EEPROM from ST company. It is compatible with all I2C bus modes, including 400 kHz fast mode and 100 kHz standard mode. The device has a 64Kbit (8K bytes) of EEPROM storage array, with a page size of 32 bytes. Write times for a byte and a page are 5 ms and 5 ms, respectively. The operating voltage is 2.5 V to 5.5 V and the operating temperature range is -40 °C to +125 °C. The device also features random and sequential read modes, whole memory array write protection, enhanced ESD/Latch-Up protection, over 1 million write cycles and over 40 years of data retention.