ST Manuals

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET is a high performance MOSFET device from ST, with a typical RDS(on) of 0.93Ω. It is ideal for high current, high speed switching applications such as offline power supplies, adaptors and PFC.

This document describes the features and characteristics of STP5NK90Z and STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET, including extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, and minimized gate charge.

STP5NK100Z - STF5NK100Z - STW5NK100Z are ST's high voltage MOSFET products with extremely low RDS(on) and very high dv/dt capability. It is suitable for high current, high speed switching applications, and is ideal for off-line power supplies.

STF42 is a small signal NPN transistor with high voltage characteristics and SOT-89 package. It is suitable for applications such as video amplifier circuits and telephone wireline interfaces.

This document describes the features and characteristics of the STF40NF06 N-CHANNEL MOSFET, including low on-resistance, exceptional dv/dt capability, low gate charge, etc. This product is suitable for applications such as DC-DC and DC-AC converters, motor control, audio amplifiers, high current high-speed switching, solenoid and relay drivers, etc.

This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STP3HNK90Z - STF3HNK90Z is an N-channel SuperMESH™ Power MOSFET with a working voltage of 900V, a typical on-resistance of 3.5Ω, and a rated current of 3A. The product has extremely high dv/dt capability, is 100% avalanche tested, minimizes gate charge, and has very low intrinsic capacitances with excellent manufacturing repeatability.

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET is a high-performance MOSFET device produced by ST company. Its characteristics are RON typical value is 7.2Ω, extremely high dv/dt capability, ESD improved capability, 100% avalanche test, new generation high voltage benchmark, and minimized gate charge. It is suitable for low-power battery chargers, switch-mode low-power power supplies (SMPS), low-power, ballasts, CFL (compact fluorescent lamps) and other applications.

This is the ST release STQ2HNK60ZR-AP, STF2HNK60Z, STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH™ MOSFET datasheet. This series has extremely high dv/dt capability, ESD improved capability, 100% avalanche tested, new high voltage benchmark, minimized gate charge and other features.

STF2907A is a small signal PNP transistor suitable for portable equipment, with high gain and low saturation voltage.

The STP25NM60N is a second generation MDmesh™ MOSFET N-channel 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247. It has the world's lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

STP22NM60 is ST company's N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET, with low input capacitance and gate charge, 100% avalanche tested, very suitable for increasing the power density of high voltage converters, enabling system miniaturization and higher efficiency.