ST Manuals

The STP08C596 is an 8-bit constant current LED sink driver from STMicroelectronics. It features 8 constant current output channels, adjustable output current through external resistor, serial data in/parallel data out, serial out change state on the failing edges of clock, output current: 15-120 mA, 25 MHz clock freq., available in high thermal TSSOP exposed pad.

The STP04CM596 is a 4-channel constant current LED driver with 4-bit serial input/parallel output, working frequency is 25MHz, can provide 80-500mA constant current, suitable for high brightness display and special lighting applications.

This document is about advance information on a new product, describing the logic diagram, features, and functions of the product. The product is a digital fuzzy co-processor with high-speed rules processing, multiple input-output configurations, and built-in fuzzy logic inference unit.

W.A.R.P. 1.1 is a high-performance fuzzy logic controller that supports up to 256 rules (4 antecedents, 1 consequent), up to 16 configurable input variables, 16 output variables, and provides software tools and emulators.

AFM 1.0 is a simulation tool for fuzzy logic, which can automatically generate a database containing inference rules and function description parameters from given input-output pairs. The generated database is the optimal approximation of the input process/function. The tool can translate project files to FUZZYSTUDIO project files, MATLAB and C code, so that this environment can be used as a support for simulation and control.

STP9NK90Z - STF9NK90Z - STW9NK90Z is a N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET produced by ST, which has very low RDS(on) and very good dv/dt capability, and is suitable for high current, high frequency switching, switch power supplies, welding, UPS and motor drives.

STP9NK80Z and STF9NK80Z are N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFETs. They have low on-resistance, high dv/dt capability, improved ESD capability, 100% avalanche rated, minimized gate charge, and very low intrinsic capacitances.

This document describes the features and characteristics of the STP9NK60ZD - STF9NK60ZD - STB9NK60ZD N-channel SuperFREDMesh™ MOSFET products, including low on-resistance, high dv/dt capability, 100% avalanche tested, minimized gate charge, low intrinsic capacitances, and fast internal recovery diode.

STF92 is a small signal PNP transistor, packaged in SOT-89 plastic package, with a maximum operating current of 0.1A and a maximum operating voltage of 300V

The STP8NK85Z is an N-channel MOSFET produced by ST. Its features are a typical Rds(on) of 1.1 ohms, extremely high dv/dt capability, improved ESD capability, 100% avalanche rating, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

STF817 STN817 are PNP medium power transistors manufactured using Planar Technology resulting in rugged high performance devices.

The STP7NK30Z is a N-channel 300V-0.80Ω-5A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET from ST, which has extremely low parasitic capacitances and very good manufacturing repeatability, and is suitable for high current, high speed switching applications such as offline power supplies, adaptors and PFC etc.

This document is about the STF724 and STN724 PNP Medium Power Transistors. They are manufactured using planar technology, resulting in rugged high performance devices. This document details the products features, characteristics, applications, packaging, component marking, polarity, absolute maximum ratings, temperature characteristics, electrical characteristics etc.

STF715 and STN715 are NPN transistors manufactured using Planar Technology resulting in rugged high performance devices.

STP6NK70Z is an N-channel 700V - 1.5Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET produced by ST company, which has the characteristics of typical RDS(on) = 1.5 Ω, extremely high dv/dt capability, improved ESD capability, 100% Avalanche Rated, minimized Gate Charge, very low Intrinsic Capacitances, and very good manufacturing repeatability.