intersil Manuals

ISL6608 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous- rectified buck converter topology.

ISL6609, ISL6609A is a high frequency MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output.

ISL6610, ISL6610A Dual Synchronous Rectified MOSFET Drivers

The ISL6611A is a phase doubler with integrated drivers and phase shedding function. It modulates two-phase power trains with a single PWM input, doubling the number of phases that Intersil's ISL63xx multiphase controllers can support. The PWM line can be pulled high to disable the corresponding phase or higher phase(s) when the enable pin (EN_PH) is pulled low, simplifying phase shedding implementation. The device integrates two 5V drivers (ISL6609) and current balance function for layout simplicity and improved system performance. It eliminates the need for the common COMP signal seen with conventional cascaded configurations, improving noise immunity and simplifying layout. The ISL6611A offers a low part count and low cost advantage over conventional cascaded techniques. It operates with a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. The upper gate driver's bootstrap is implemented via an internal low forward drop diode, reducing implementation cost and complexity, and allowing the use of higher performance, cost-effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent.

The ISL6614B is a dual advanced synchronous rectified Buck MOSFET driver with pre-power-on overvoltage protection. It is designed to drive two channel MOSFETs in a synchronous rectified Buck converter topology. This driver, combined with HIP63xx or ISL65xx multi-phase Buck PWM controllers and N-Channel MOSFETs, provides complete core-voltage regulator solutions for advanced microprocessors. The ISL6614B features a 7V rising threshold and drives both the upper and lower gates simultaneously over a range from 5V to 12V. This drive voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. The driver is optimized for POL DC/DC converters for IBA systems. It integrates advanced adaptive zero shoot-through protection to prevent both the upper and lower MOSFETs from conducting simultaneously and minimize dead time. These products also have an overvoltage protection feature that operates before VCC exceeds its turn-on threshold, at which point the PHASE node is connected to the gate of the low-side MOSFET (LGATE).

The ISL6615 is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology.

ISL6615A is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615A drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead-time. The ISL6615A includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted. The ISL6615A also features an input that recognizes a high-impedance.

ISL6620, ISL6620A is a high frequency MOSFET driver designed by Intersil for VR11.1 controller to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. It has advanced PWM protocol and can work with Intersil VR11.1 controller. When ISL6620, ISL6620A detects a PSI protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. The IC is biased by a single low voltage supply (5V), minimizing driving losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. To further improve efficiency and reduce cost, ISL6620, ISL6620A adopts single power supply, high switching frequency, high gate drive current and enhanced EMI suppression technologies.

The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a PSI protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5.75V (typically) during PSI mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5.75V, 6.75V, and 7.75V (typically) during PSI mode. This provides the flexibility necessary to optimize applications.

The ISL6622A is an Intersil high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs to implement a synchronous rectified Buck converter topology. ISL6622A's advanced PWM protocol is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622A detects a PSI protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622A drives the upper gate to 12V while the lower get can be driven from 5V to 12V. The 10 Ld DFN part allows for more flexibility. The upper gate can be driven from 5V to 12V using the UVCC pin and the lower gate can also be driven from 5V to 12V using the LVCC pin. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. To further enhance light load efficiency, the ISL6622A enables an additional start-up current control function for reducing EMI.

ISL6622B is a high frequency MOSFET driver from ISL designed to work with VR11.1 controllers for driving upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. When ISL6622B detects a PSI PWM protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622B drives the upper gate to 12V while the lower drive voltage is fixed at 5.75V. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5.75V, 6.75V, and 7.75V (typical). This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. ISL6622B employs a high-frequency, high-efficiency synchronous rectified buck converter topology to provide excellent light load efficiency.

The PX3511A and PX3511B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with the ISL6595 Digital Multi-Phase Buck PWM controller and N-Channel MOSFETs form a complete core-voltage regulator solution for advanced microprocessors. The PX3511A drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The PX3511B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up.

The PX3511D is a high frequency MOSFET driver specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology.

ZL1505 is a synchronous step-down MOSFET driver from Intersil, which integrates a 5A, 0.5W low-side driver and a 3A, 0.8W high-side driver to support high step-down buck applications.

The EL7202, EL7212, EL7222 ICs are matched dual-drivers that improve the operation of the industry standard DS0026 clock drivers. The Elantec versions are very high speed drivers capable of delivering peak currents of 2.0 amps into highly capacitive loads. The high speed performance is achieved by means of a proprietary “Turbo-Driver” circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays maintain the integrity of input-to-output pulse-widths to reduce timing errors and clock skew problems. This improved performance is accompanied by a 10 fold reduction in supply currents over bipolar drivers, yet without the delay time problems commonly associated with CMOS devices. Dynamic switching losses are minimized with non-overlapped drive techniques.