This ABB 5STP20N8500 control thyristor datasheet provides detailed information about the product's features and characteristics. The product features patented free-floating silicon technology, which provides low on-state resistance and switching losses. It is designed for traction, energy, and industrial applications and has optimum power handling capability. The product also features an interdigitated amplifying gate for improved current transfer capability.
This document is a technical datasheet for the ABB 5STP20N8500 Control Thyristor, a high-power semiconductor device designed for traction, energy, and industrial applications. It highlights patented free-floating silicon technology and low on-state losses.
| RMS on-state current | 3150 A |
|---|---|
| Peak non-repetitive surge current | 47.5-10° A |
| Storage temperature range | -40 to 140 °C |
| Weight | 2.9 kg |
| Surface creepage distance | 56 mm |
The device is designed for traction, energy, and industrial applications.