This document is the datasheet of ABB 5STP12F4200 control thyristor. This thyristor features patented free-floating silicon technology, low on-state and switching losses. It is designed for traction, energy and industrial applications with optimum power handling capability.
This document is a datasheet for the ABB 5STP12F4200 Control Thyristor, a high-power semiconductor device designed for traction, energy, and industrial applications. It features patented free-floating silicon technology to ensure low on-state and switching losses.
The datasheet provides comprehensive technical data including maximum rated values for blocking voltage (4200V), RMS on-state current (1800A), and peak non-repetitive surge current. It also details characteristic values for triggering, thermal resistance, and power loss calculations, along with mechanical mounting requirements and related application documents.
| RMS on-state current | 1800 A |
|---|---|
| Gate-trigger voltage | 2.6 V |
| Weight | 0.6 kg |
The RMS on-state current rating is 1800 A.
It is designed for traction, energy, and industrial applications.