This product is ABB's 5STP12K6500 control thyristor, which has patented floating silicon technology, low on-state and switching losses, is suitable for traction, energy and industrial applications, optimal power handling capability and interdigitated amplifying gate.
This document is a technical datasheet for the ABB 5STP12K6500 phase control thyristor. It highlights the device's patented free-floating silicon technology, which provides low on-state and switching losses, optimizing power handling capability for traction, energy, and industrial applications. The thyristor features an interdigitated amplifying gate design.
| Max surge peak forward and reverse blocking voltage | 6500 V |
|---|---|
| Max repetitive peak forward and reverse blocking voltage | 6500 V |
| Average on-state current | 1370 A |
| RMS on-state current | 2160 A |
| Peak non-repetitive surge current | 31.5·103 A |
| Operating junction temperature range | 125 °C |
| Storage temperature range | -40 to 140 °C |
| Thermal resistance junction to case (double-side cooled) | 11 K/kW |
It is designed for traction, energy, and industrial applications.
It uses patented free-floating silicon technology.
The maximum permissible case temperature is 125 °C.